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DOD - SMD 5962-03235

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT (4M), RADIATION-HARDENED SRAM, MONOLITHIC SILICON

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Organization: DOD
Publication Date: 5 May 2009
Status: inactive
Page Count: 26
scope:

This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application.

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

January 13, 2021
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT (4M), RADIATION-HARDENED SRAM, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...
January 19, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT (4M), RADIATIONHARDENED SRAM, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
SMD 5962-03235
May 5, 2009
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT (4M), RADIATION-HARDENED SRAM, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and for appropriate satellite and similar...
November 8, 2004
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8-BIT (4M), RADIATION-HARDENED SRAM, MONOLITHIC SILICON
A description is not available for this item.
November 18, 2003
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8-BIT (4M), RADIATION-HARDENED SRAM, MONOLITHIC SILICON
A description is not available for this item.

References

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