DLA - SMD-5962-03235 REV A
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8-BIT (4M), RADIATION-HARDENED SRAM, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 8 November 2004 |
| Status: | inactive |
| Page Count: | 25 |
Document History
January 13, 2021
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT (4M), RADIATION-HARDENED SRAM, MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...
January 19, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT (4M), RADIATIONHARDENED SRAM, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
May 5, 2009
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT (4M), RADIATION-HARDENED SRAM, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and for appropriate satellite and similar...
SMD-5962-03235 REV A
November 8, 2004
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8-BIT (4M), RADIATION-HARDENED SRAM, MONOLITHIC SILICON
A description is not available for this item.
November 18, 2003
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8-BIT (4M), RADIATION-HARDENED SRAM, MONOLITHIC SILICON
A description is not available for this item.