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DOD - SMD 5962-02501

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K x 8-BIT, LOW VOLTAGE (3.3 V) SRAM, MONOLITHIC SILICON

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Organization: DOD
Publication Date: 18 February 2010
Status: inactive
Page Count: 21
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

February 21, 2019
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K x 8-BIT, LOW VOLTAGE (3.3 V) SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
SMD 5962-02501
February 18, 2010
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K x 8-BIT, LOW VOLTAGE (3.3 V) SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V). A choice of case outlines and lead finishes are...
September 7, 2004
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 8-BIT, LOW VOLTAGE (3.3 V) SRAM, MONOLITHIC SILICON
A description is not available for this item.
August 29, 2003
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 8-BIT, LOW VOLTAGE (3.3 V) SRAM, MONOLITHIC SILICON
A description is not available for this item.
May 13, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 8-BIT, LOW VOLTAGE (3.3 V) SRAM, MONOLITHIC SILICON
A description is not available for this item.

References

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