scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number 1/ Circuit function Input/output levels Access time 01 1M8C3V 128K × 8 Rad-Hard CMOS SRAM CMOS 30 ns 02 1M8C3V 128K × 8 Rad-Hard CMOS SRAM CMOS 35 ns

The device class designator is a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X See figure 1 40 Flat pack

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage range (V_DD) ............................ −0.5 V dc to +5.5 V dc DC input voltage range (V_IN) .......................... −0.5 V dc to V_DD + 0.5 V 4/ DC output voltage range(V_OUT) ......................... −0.5 V dc to V_DD + 0.5 V 4/ Storage temperature range ............................. −65°C to +150°C Case operating temperature range ...................... −55°C to +125°C Lead temperature (soldering 5 seconds) ................ +250°C Thermal resistance, junction-to-case (θ_JC) ............ 3.5°C/W Maximum power dissipation ............................. 1.3 W Maximum junction temperature .......................... +150°C

Supply voltage range (V_DD) ............................ +3.14 V dc to +3.46 V dc Supply voltage reference (GND) ........................ 0.0 V High level input voltage range (V_IH) .................. 2.2 V dc to V_DD Low level input voltage range (V_IL) ................... 0.0 V dc to 0.8V dc Case operating temperature range ...................... −55°C to +125°C

Total dose irradiation .................................. ≥ 1 × 10⁶ Rads(Si) Dose rate upset ......................................... ≥ 1 × 10⁹ Rads(Si)/sec Dose rate survivability ................................. ≥ 1 × 10¹² Rads(Si)/sec Single event phenomenon (SEP) effective linear energy threshold (LET) with no upsets ........... ≥ 84 MEV-cm²/mg Neutron irradiation ..................................... 1 × 10¹⁴ neutrons/cm²

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) ............ 100 percent

intended Use: