DOD - SMD 5962-08241
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8, 3.3 VOLT, RADIATION HARDENED, Nonvolatile RANDOM ACCESS MEMORY (NVRAM), MONOLITHIC SILICON
inactive
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| Organization: | DOD |
| Publication Date: | 17 September 2010 |
| Status: | inactive |
| Page Count: | 23 |
scope:
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
June 6, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8, 3.3 VOLT, RADIATION HARDENED, NONVOLATILE RANDOM ACCESS MEMORY (NVRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q) and space application (device class V). A choice of case outlines and lead finishes are...
October 21, 2013
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8, 3.3 VOLT, RADIATION HARDENED, Nonvolatile RANDOM ACCESS MEMORY (NVRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q) and space application (device class V). A choice of case outlines and lead finishes are...
SMD 5962-08241
September 17, 2010
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 8, 3.3 VOLT, RADIATION HARDENED, Nonvolatile RANDOM ACCESS MEMORY (NVRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...