NPFC - MIL-PRF-19500/615
TRANSISTOR, FIELD EFFECT RADIATION HARDENED * ENCAPSULATED (THROUGH-HOLE PACKAGE) P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F
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| Organization: | NPFC |
| Publication Date: | 30 August 2018 |
| Status: | inactive |
| Page Count: | 23 |
scope:
This specification covers the performance requirements for a P-channel, radiation hardened (total dose and single event effects (SEE)), enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two levels of product assurance (JANTXV and JANS) are provided for each device type, with avalanche energy ratings (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to four radiation levels ("M", "D", "R" and "F") are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
September 25, 2023
TRANSISTOR, FIELD EFFECT RADIATION HARDENED ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGE) P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F
A description is not available for this item.
August 26, 2021
TRANSISTOR, FIELD EFFECT RADIATION HARDENED ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGE) P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F
This specification covers the performance requirements for a P-channel, radiation hardened (total dose and single event effects (SEE)), enhancement mode, MOSFET, power transistor intended for use in...
MIL-PRF-19500/615
August 30, 2018
TRANSISTOR, FIELD EFFECT RADIATION HARDENED * ENCAPSULATED (THROUGH-HOLE PACKAGE) P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F
This specification covers the performance requirements for a P-channel, radiation hardened (total dose and single event effects (SEE)), enhancement mode, MOSFET, power transistor intended for use in...
April 7, 2018
TRANSISTOR, FIELD EFFECT RADIATION HARDENED ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNTPACKAGE) P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F
Scope.
This specification covers the performance requirements for a P-channel, radiation hardened (total dose and single event effects (SEE)), enhancement mode, MOSFET, power transistor intended for...
January 18, 2017
TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F
This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications....
April 1, 2014
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F
This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications....
July 10, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F
This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications....
March 28, 2012
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F
This specification covers the performance requirements for a P-channel, radiation hardened, (total dose and single event effects (SEE)),enhancement mode, MOSFET, power transistor intended for use in...
March 14, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F
This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications....
October 6, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F
This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications....
March 13, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383 JANTXV M, D, R, AND F AND JANS M, D, R, AND F
A description is not available for this item.
May 2, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F
This specification covers the performance requirements for a P-channel, Radiation Hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications....
November 8, 1996
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383 JANTXV M, D AND R AND JANS M, D AND R
A description is not available for this item.
May 3, 1996
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383 JANTXV M, D AND R AND JANS M, D AND R
This specification covers the detail requirements for a P-channel, Radiation Hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two...
December 10, 1993
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383 JANTXV M, D AND R AND JANS M, D AND R
This specification covers the detail requirements for a P-channel, Radiation Hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two...