NPFC - MIL-PRF-19500/562
TRANSISTOR, FIELD EFFECT, P-CHANNEL, SILICON, ENCAPSULATED (THROUGH-HOLE MOUNT PACKAGES) AND UN-ENCAPSULATED (DIE), TYPES 2N6804 AND 2N6806 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
active, Most Current
Buy Now
| Organization: | NPFC |
| Publication Date: | 30 January 2019 |
| Status: | active |
| Page Count: | 23 |
scope:
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/562
January 30, 2019
TRANSISTOR, FIELD EFFECT, P-CHANNEL, SILICON, ENCAPSULATED (THROUGH-HOLE MOUNT PACKAGES) AND UN-ENCAPSULATED (DIE), TYPES 2N6804 AND 2N6806 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
June 27, 2018
Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6804 and 2N6806 JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
A description is not available for this item.
September 13, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6804 AND 2N6806 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
August 26, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6804 AND 2N6806 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
November 24, 2008
Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6804 and 2N6806 JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
November 5, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6804 AND 2N6806 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
October 12, 1999
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6804 AND 2N6806 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
July 30, 1999
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6804 AND 2N6806 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
January 7, 1994
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6804 AND 2N6806 JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for a P-Channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...
March 10, 1991
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6804 AND 2N6806, JANTX, JANTXV, AND JANS
A description is not available for this item.
June 20, 1988
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6804 AND 2N6806 JANTX, JANTXV, AND JANS
A description is not available for this item.
September 8, 1987
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6804 AND 2N6806 JANTX, JANTXV, AND JANS
This specification covers the detail requirements for a P-Channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...
January 24, 1986
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6804 AND 2N6806 JANTX, JANTXV, AND JANS
A description is not available for this item.