DLA - MIL-S-19500/562B
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6804 AND 2N6806 JANTX, JANTXV, JANS, JANHC, AND JANKC
inactive
| Organization: | DLA |
| Publication Date: | 7 January 1994 |
| Status: | inactive |
| Page Count: | 18 |
scope:
This specification covers the detail requirements for a P-Channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-S-19500. Two levels of product assurance are provided for each unencapsulated device type.
See figure 1, TO-204AA (formerly TO-3), figures 2, 3, and (see 6.4) for JANHC and JANKC die dimensions.
Unless otherwise specified, TA = +25°C. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: NASA/Parts Project Office (NPPO), NASA Goddard Space Flight Center, Code 311.A, Greenbelt, MD 20771-3917, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History
January 30, 2019
TRANSISTOR, FIELD EFFECT, P-CHANNEL, SILICON, ENCAPSULATED (THROUGH-HOLE MOUNT PACKAGES) AND UN-ENCAPSULATED (DIE), TYPES 2N6804 AND 2N6806 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
June 27, 2018
Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6804 and 2N6806 JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
A description is not available for this item.
September 13, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6804 AND 2N6806 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
August 26, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6804 AND 2N6806 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
November 24, 2008
Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6804 and 2N6806 JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
November 5, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6804 AND 2N6806 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
October 12, 1999
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6804 AND 2N6806 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
July 30, 1999
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6804 AND 2N6806 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
MIL-S-19500/562B
January 7, 1994
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6804 AND 2N6806 JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for a P-Channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...
March 10, 1991
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6804 AND 2N6806, JANTX, JANTXV, AND JANS
A description is not available for this item.
June 20, 1988
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6804 AND 2N6806 JANTX, JANTXV, AND JANS
A description is not available for this item.
September 8, 1987
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6804 AND 2N6806 JANTX, JANTXV, AND JANS
This specification covers the detail requirements for a P-Channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...
January 24, 1986
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6804 AND 2N6806 JANTX, JANTXV, AND JANS
A description is not available for this item.