DOD - SMD 5962-79013
MICROCIRCUIT, DIGITAL, CMOS, BUFFERED TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
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| Organization: | DOD |
| Publication Date: | 22 June 2011 |
| Status: | inactive |
| Page Count: | 11 |
scope:
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
May 23, 2018
MICROCIRCUIT, DIGITAL, CMOS, BUFFERED TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD 5962-79013
June 22, 2011
MICROCIRCUIT, DIGITAL, CMOS, BUFFERED TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
January 14, 2005
MICROCIRCUIT, DIGITAL, CMOS, BUFFERED TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
May 7, 2001
MICROCIRCUIT, DIGITAL, CMOS, BUFFERED TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
February 4, 1994
MICROCIRCUIT, DIGITAL, CMOS, BUFFERED TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....