DLA - SMD-5962-79013 REV E
MICROCIRCUIT, DIGITAL, CMOS, BUFFERED TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 7 May 2001 |
| Status: | inactive |
| Page Count: | 12 |
Document History
May 23, 2018
MICROCIRCUIT, DIGITAL, CMOS, BUFFERED TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
June 22, 2011
MICROCIRCUIT, DIGITAL, CMOS, BUFFERED TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
January 14, 2005
MICROCIRCUIT, DIGITAL, CMOS, BUFFERED TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-79013 REV E
May 7, 2001
MICROCIRCUIT, DIGITAL, CMOS, BUFFERED TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
February 4, 1994
MICROCIRCUIT, DIGITAL, CMOS, BUFFERED TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....