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DLA - SMD-5962-79013 REV D

MICROCIRCUIT, DIGITAL, CMOS, BUFFERED TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 4 February 1994
Status: inactive
Page Count: 10
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 4023B NAND gates 02 14023B NAND gates

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein). Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range - - - - - - - - - - - - - - - - - - - - - - - - - - - - - −0.5 V dc to +18 V dc Input voltage range - - - - - - - - - - - - - - - - - - - - - - - - - - - - - −0.5 V dc to VDD +0.5 V dc Storage temperature range - - - - - - - - - - - - - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) 1/ - - - - - - - - - - - - - - - - - - - - - - 500 mW dc Lead temperature (soldering, 10 seconds) - - - - - - - - - - - - - - - - - - - −300°C Thermal resistance, junction to case (θJC) - - - - - - - - - - - - - - - - - - See MIL-STD-1835 Junction temperature (TJ)- - - - - - - - - - - - - - - - - - - - - - - - - - - +175°C

Supply voltage range - - - - - - - - - - - - - - - - - - - - - - - - - - - - - +3.0 V dc to +15 V dc Case operating temperature range - - - - - - - - - - - - - - - - - - - - - - - −55°C to 125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

May 23, 2018
MICROCIRCUIT, DIGITAL, CMOS, BUFFERED TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
June 22, 2011
MICROCIRCUIT, DIGITAL, CMOS, BUFFERED TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
January 14, 2005
MICROCIRCUIT, DIGITAL, CMOS, BUFFERED TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
May 7, 2001
MICROCIRCUIT, DIGITAL, CMOS, BUFFERED TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-79013 REV D
February 4, 1994
MICROCIRCUIT, DIGITAL, CMOS, BUFFERED TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....

References

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