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IEC 62047-12

Semiconductor devices – Micro-electromechanical devices – Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures

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Organization: IEC
Publication Date: 1 September 2011
Status: active
Page Count: 64
ICS Code (Other semiconductor devices): 31.080.99
scope:

This part of IEC 62047 specifies a method for bending fatigue testing using resonant vibration of microscale mechanical structures of MEMS (micro-electromechanical systems) and micromachines. This standard applies to vibrating structures ranging in size from 10 μm to 1 000 μm in the plane direction and from 1 μm to 100 μm in thickness, and test materials measuring under 1 mm in length, under 1 mm in width, and between 0,1 μm and 10 μm in thickness.

The main structural materials for MEMS, micromachine, etc. have special features, such as typical dimensions of a few microns, material fabrication by deposition, and test piece fabrication by means of non-mechanical machining, including photolithography. The MEMS structures often have higher fundamental resonant frequency and higher strength than macro structures. To evaluate and assure the lifetime of MEMS structures, a fatigue testing method with ultra high cycles (up to 1012) loadings needs to be established. The object of the test method is to evaluate the mechanical fatigue properties of microscale materials in a short time by applying high load and high cyclic frequency bending stress using resonant vibration.

Document History

IEC 62047-12
September 1, 2011
Semiconductor devices – Micro-electromechanical devices – Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures
This part of IEC 62047 specifies a method for bending fatigue testing using resonant vibration of microscale mechanical structures of MEMS (micro-electromechanical systems) and micromachines. This...

References

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