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DLA - SMD-5962-91760 REV C

MICROCIRCUIT, MEMORY, DIGITAL, BICMOS, ONE TIME PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 30 April 1996
Status: inactive
Page Count: 21
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Three product assurance classes consisting of space application (device class V), military high reliability (device classes M and Q), and non-traditional military (device class N) with a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class N microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". For device class N, the user is cautioned to assure that the device is appropriate for the application environment. When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-PRF-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes N, Q, and V RHA marked devices shall meet the MIL-PRF-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 22V10G-15 22-input 10-output and-or-logic array 15 ns 02 22V10G-12 22-input 10-output and-or-logic array 12 ns 03 22V10G-10 22-input 10-output and-or-logic array 10 ns 04 22VP10G-15 22-input 10-output and-or-logic array 15 ns 05 22VP10G-12 22-input 10-output and-or-logic array 12 ns 06 22VP10G-10 22-input 10-output and-or-logic array 10 ns 07 22V10A 22-input 10-output and-or-logic array 10 ns 08 22V10B 22-input 10-output and-or-logic array 8.5 ns 09 22V10G-7.5 22-input 10-output and-or-logic array 7.5 ns 10 22VP10G-7.5 22-input 10-output and-or-logic array 7.5 ns 11 22V10A 22-input 10-output and-or-logic array 10 ns 12 22V10A 22-input 10-output and-or-logic array 10 ns 13 22V10B 22-input 10-output and-or-logic array 8.5 ns 14 22V10B 22-input 10-output and-or-logic array 8.5 ns

The device class designator shall be a single letter identifying the product assurance level (see 6.6 herein) as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 N Certification and qualification to MIL-PRF-38535 with a non-traditional performance environment 1/ Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) shall be as designated in MIL-STD-1835, JEDEC Publication 95, and as follows:

Outline letter Descriptive designator Terminals Package style Document 3 CQCC1-N28 28 Square leadless chip carrier package MIL-STD-1835 L GDIP3-T24 24 Dual-in-line package MIL-STD-1835 X MS-001 AF 24 Plastic dual-in-line package JEP 95

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-PRF-38535 for classes N, Q, and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range to ground potential (VCC). . . . . . . . . −0.5 V dc to +7.0 V dc DC voltage range applied to the outputs in the high-Z state . . −0.5 V dc to +VCC Maximum, power dissipation . . . . . . . . . . . . . . . . . . 1.045 W 4/ Lead temperature (soldering, 10 seconds) . . . . . . . . . . . +260°C Thermal resistance, junction-to-case (θJC): Cases 3, L . . . . . . . . . . . . . . . . . . . . . . . . . See MIL-STD-1835 Case X . . . . . . . . . . . . . . . . . . . . . . . . . . . 22°C/W Junction temperature (TJ) . . . . . . . . . . . . . . . . . . . +175°C Storage temperature range (TSTG). . . . . . . . . . . . . . . . −65°C to +150°C Temperature (under bias) range . . . . . . . . . . . . . . . . −55°C to +120°C Devices 11-14 . . . . . . . . . . . . . . . . . . . . . . . −40°C to +85°C

Supply voltage range (VCC) . . . . . . . . . . . . . . . . . . +4.5 V dc minimum to +5.5 V dc maximum Supply voltage range (VCC) . . . . . . . . . . . . . . . . . . +4.75 V dc minimum to +5.25 V dc maximum (for devices 07, 08, 11, 12, 13, 14) Ground voltage (GND) . . . . . . . . . . . . . . . . . . . . . 0 V dc Input high voltage (VIH) . . . . . . . . . . . . . . . . . . . 2.0 V dc minimum 5/ Input low voltage (VIL) . . . . . . . . . . . . . . . . . . . . 0.8 V dc maximum 5/ Case operating temperature range (TC) . . . . . . . . . . . . . −55°C to +125°C (for devices 11-14) . . . . . . . . . . . . . . . . . . . . . −40°C to +85°C

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) . . . . . . . . . xx percent 6/

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

January 8, 2016
MICROCIRCUIT, MEMORY, DIGITAL, BICMOS, ONE TIME PROGRAMMABLE LOGIC DEVICE MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device class M and Q), and nontraditional performance environment...
May 24, 2007
MICROCIRCUIT, MEMORY, DIGITAL, BICMOS, ONE TIME PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment...
SMD-5962-91760 REV C
April 30, 1996
MICROCIRCUIT, MEMORY, DIGITAL, BICMOS, ONE TIME PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Three product assurance classes consisting of space application (device class V), military high...
December 15, 1995
MICROCIRCUIT, MEMORY, DIGITAL, BICMOS, ONE TIME PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Three product assurance classes consisting of space application (device class V), military high...
October 17, 1994
MICROCIRCUIT, MEMORY, DIGITAL, BICMOS, ONE TIME PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...
January 19, 1993
MICROCIRCUIT, MEMORY, DIGITAL, BICMOS, ONE TIME PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing forms a part of one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...
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