NPFC - MIL-PRF-19500/701
TRANSISTOR, FIELD, EFFECT, N-CHANNEL, SILICON, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPES 2N7491T2, 2N7492T2, AND 2N7493T2, QUALITY LEVELS JANTXV AND JANS
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| Organization: | NPFC |
| Publication Date: | 21 January 2020 |
| Status: | active |
| Page Count: | 23 |
scope:
Scope.
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. These transistors include ratings for avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/701
January 21, 2020
TRANSISTOR, FIELD, EFFECT, N-CHANNEL, SILICON, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPES 2N7491T2, 2N7492T2, AND 2N7493T2, QUALITY LEVELS JANTXV AND JANS
Scope.
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. These...
November 7, 2018
Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel, Silicon, Types 2N7491T2, 2N7492T2, and 2N7493T2, JANTXVR, F, G, and H and JANSR, F, G, and H
A description is not available for this item.
January 27, 2014
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7491T2, 2N7492T2, AND 2N7493T2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device...
January 18, 2011
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7491T2, 2N7492T2, AND 2N7493T2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...
November 16, 2009
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7491T2, 2N7492T2, AND 2N7493T2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...
July 9, 2009
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7491T2, 2N7492T2, and 2N7493T2, JANTXVR, F, G, and H and JANSR, F, G, and H
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...
July 5, 2004
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7491T2, 2N7492T2, AND 2N7493T2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...
April 10, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7491T2, 2N7492T2 AND 2N7493T2 JANTXVR, F, G AND H AND JANSR, F, G AND H
A description is not available for this item.
December 10, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7491T2, 2N7492T2 AND 2N7493T2 JANTXVR, F, G AND H AND JANSR, F, G AND H
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...