DLA - SMD-5962-01529 REV C
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 1 STATIC RANDOM ACCESS MEMORY, (SRAM), MONOLITHIC SILICON
active, Most Current
| Organization: | DLA |
| Publication Date: | 24 February 2022 |
| Status: | active |
| Page Count: | 18 |
scope:
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
SMD-5962-01529 REV C
February 24, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 1 STATIC RANDOM ACCESS MEMORY, (SRAM), MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead...
July 10, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 1 STATIC RANDOM ACCESS MEMORY, (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
February 7, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 1 STATIC RANDOM ACCESS MEMORY, (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
December 12, 2001
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 1 STATIC RANDOM ACCESS MEMORY, (SRAM), MONOLITHIC SILICON
A description is not available for this item.