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DOD - SMD 5962-01529

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 1 STATIC RANDOM ACCESS MEMORY, (SRAM), MONOLITHIC SILICON

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Organization: DOD
Publication Date: 7 February 2007
Status: inactive
Page Count: 18
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

February 24, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 1 STATIC RANDOM ACCESS MEMORY, (SRAM), MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead...
July 10, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 1 STATIC RANDOM ACCESS MEMORY, (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD 5962-01529
February 7, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 1 STATIC RANDOM ACCESS MEMORY, (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
December 12, 2001
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 1 STATIC RANDOM ACCESS MEMORY, (SRAM), MONOLITHIC SILICON
A description is not available for this item.

References

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