DLA - MIL-PRF-19500/187B (2)
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-VOLTAGE, TYPE JAN1N2361
active, Most Current
| Organization: | DLA |
| Publication Date: | 20 November 2022 |
| Status: | active |
| Page Count: | 8 |
scope:
Scope.
This specification covers the performance requirements for silicon semiconductor diodes for use in high-voltage, rectifier circuits, and having the following particular characteristics. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/187B (2)
November 20, 2022
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-VOLTAGE, TYPE JAN1N2361
Scope.
This specification covers the performance requirements for silicon semiconductor diodes for use in high-voltage, rectifier circuits, and having the following particular characteristics. One...
February 3, 2012
SEMICONDUCTOR DIODE, DILICON, HIGH-VOLTAGE TYPE JAN1N2361
This specification covers the performance requirements for silicon semiconductor diodes for use in high-voltage, rectifier circuits, and having the following particular characteristics. One level of...
February 10, 2005
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
This specification covers the performance requirements for silicon semiconductor diodes for use in high-voltage, rectifier circuits, and having the following particular characteristics. One level of...
June 7, 1999
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
A description is not available for this item.
July 6, 1990
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
A description is not available for this item.
March 29, 1984
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
A description is not available for this item.
April 18, 1966
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
A description is not available for this item.
September 14, 1962
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
This specification covers the detail requirements for silicon semiconductor diodes for use in high-voltage, rectifier circuits, and having the following particular characteristics. (See 3.2 herein.):...
March 2, 1962
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
A description is not available for this item.