DLA - MIL-S-19500/187 (1)
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
inactive
| Organization: | DLA |
| Publication Date: | 2 March 1962 |
| Status: | inactive |
| Page Count: | 2 |
Document History
November 20, 2022
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-VOLTAGE, TYPE JAN1N2361
Scope.
This specification covers the performance requirements for silicon semiconductor diodes for use in high-voltage, rectifier circuits, and having the following particular characteristics. One...
February 3, 2012
SEMICONDUCTOR DIODE, DILICON, HIGH-VOLTAGE TYPE JAN1N2361
This specification covers the performance requirements for silicon semiconductor diodes for use in high-voltage, rectifier circuits, and having the following particular characteristics. One level of...
February 10, 2005
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
This specification covers the performance requirements for silicon semiconductor diodes for use in high-voltage, rectifier circuits, and having the following particular characteristics. One level of...
June 7, 1999
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
A description is not available for this item.
July 6, 1990
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
A description is not available for this item.
March 29, 1984
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
A description is not available for this item.
April 18, 1966
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
A description is not available for this item.
September 14, 1962
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
This specification covers the detail requirements for silicon semiconductor diodes for use in high-voltage, rectifier circuits, and having the following particular characteristics. (See 3.2 herein.):...
MIL-S-19500/187 (1)
March 2, 1962
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
A description is not available for this item.