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NPFC - MIL-PRF-19500/187

SEMICONDUCTOR DIODE, DILICON, HIGH-VOLTAGE TYPE JAN1N2361

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Organization: NPFC
Publication Date: 3 February 2012
Status: active
Page Count: 8
scope:

This specification covers the performance requirements for silicon semiconductor diodes for use in high-voltage, rectifier circuits, and having the following particular characteristics. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.

intended Use:

Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

November 20, 2022
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-VOLTAGE, TYPE JAN1N2361
Scope. This specification covers the performance requirements for silicon semiconductor diodes for use in high-voltage, rectifier circuits, and having the following particular characteristics. One...
MIL-PRF-19500/187
February 3, 2012
SEMICONDUCTOR DIODE, DILICON, HIGH-VOLTAGE TYPE JAN1N2361
This specification covers the performance requirements for silicon semiconductor diodes for use in high-voltage, rectifier circuits, and having the following particular characteristics. One level of...
February 10, 2005
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
This specification covers the performance requirements for silicon semiconductor diodes for use in high-voltage, rectifier circuits, and having the following particular characteristics. One level of...
June 7, 1999
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
A description is not available for this item.
July 6, 1990
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
A description is not available for this item.
March 29, 1984
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
A description is not available for this item.
April 18, 1966
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
A description is not available for this item.
September 14, 1962
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
This specification covers the detail requirements for silicon semiconductor diodes for use in high-voltage, rectifier circuits, and having the following particular characteristics. (See 3.2 herein.):...
March 2, 1962
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
A description is not available for this item.

References

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