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DLA - MIL-PRF-19500/187B

SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361

inactive
Organization: DLA
Publication Date: 10 February 2005
Status: inactive
Page Count: 7
scope:

This specification covers the performance requirements for silicon semiconductor diodes for use in high-voltage, rectifier circuits, and having the following particular characteristics. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.

intended Use:

The notes specified in MIL-PRF-19500 are applicable to this specification.

Document History

MIL-PRF-19500/187B (2)
November 20, 2022
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-VOLTAGE, TYPE JAN1N2361
Scope. This specification covers the performance requirements for silicon semiconductor diodes for use in high-voltage, rectifier circuits, and having the following particular characteristics. One...
MIL-PRF-19500/187
February 3, 2012
SEMICONDUCTOR DIODE, DILICON, HIGH-VOLTAGE TYPE JAN1N2361
This specification covers the performance requirements for silicon semiconductor diodes for use in high-voltage, rectifier circuits, and having the following particular characteristics. One level of...
MIL-PRF-19500/187B
February 10, 2005
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
This specification covers the performance requirements for silicon semiconductor diodes for use in high-voltage, rectifier circuits, and having the following particular characteristics. One level of...
MIL-PRF-19500/187
June 7, 1999
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
A description is not available for this item.
MIL-S-19500/187
July 6, 1990
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
A description is not available for this item.
MIL-S-19500/187
March 29, 1984
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
A description is not available for this item.
MIL-S-19500/187
April 18, 1966
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
A description is not available for this item.
MIL-S-19500/187
September 14, 1962
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
This specification covers the detail requirements for silicon semiconductor diodes for use in high-voltage, rectifier circuits, and having the following particular characteristics. (See 3.2 herein.):...
MIL-S-19500/187 (1)
March 2, 1962
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361
A description is not available for this item.
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References

This document references:
MIL-PRF-19500R - SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
Published by DLA on July 24, 2021
Scope. This specification establishes the general performance requirements for semiconductor devices. Product assurance is provided by effective screening, conformance inspection, and process...
This document references:
MIL-STD-750F CHANGE 3 - TEST METHODS FOR SEMICONDUCTOR DEVICES
Published by DLA on April 1, 2021
Purpose. This standard establishes uniform methods and procedures for testing semiconductor devices suitable for use within Military and Aerospace electronic systems. The methods and procedures in...
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