DLA - MIL-PRF-19500/599E (4)
TRANSISTOR, QUAD, FIELD EFFECT, P-CHANNEL, SILICON, 14-PIN DUAL INLINE PACKAGE, TYPE 2N7335, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
active, Most Current
| Organization: | DLA |
| Publication Date: | 27 November 2023 |
| Status: | active |
| Page Count: | 19 |
scope:
Scope.
This specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR). Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance (JANHC and JANKC) for each unencapsulated device type die (element evaluation) as specified in MIL-PRF-19500.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/599E (4)
November 27, 2023
TRANSISTOR, QUAD, FIELD EFFECT, P-CHANNEL, SILICON, 14-PIN DUAL INLINE PACKAGE, TYPE 2N7335, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings (EAS and EAR) and maximum avalanche current...
October 19, 2018
TRANSISTOR, QUAD, FIELD EFFECT, P-CHANNEL, SILICON, 14-PIN DUAL INLINE PACKAGE, TYPE 2N7335, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR)....
February 27, 2015
SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, P-CHANNEL, SILICON, TYPE 2N7335, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR)....
May 9, 2014
SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, P-CHANNEL, SILICON, TYPE 2N7335, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR)....
November 20, 2008
Semiconductor Device, Quad, Field Effect Transistors, P-Channel, Silicon Type 2N7335 JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
This specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type...
October 31, 2003
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR)....
October 31, 2003
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type...
June 26, 2001
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
May 8, 1998
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
December 30, 1997
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type...
June 30, 1997
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
July 12, 1995
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
March 31, 1995
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for quad P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product...
December 16, 1994
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
July 28, 1994
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for quad P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...
January 27, 1993
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JANTX, JANTXV, JANS, AND JANC
A description is not available for this item.
January 8, 1993
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JANTX, JANTXV, JANS, AND JANC
A description is not available for this item.
July 29, 1992
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JANTX, JANTXV, JANS, AND JANC
A description is not available for this item.
November 4, 1991
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JANTX, JANTXV, JANS, AND JANC
This specification covers the detail requirements for quad P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...