NPFC - MIL-PRF-19500/599
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
inactive
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| Organization: | NPFC |
| Publication Date: | 31 October 2003 |
| Status: | inactive |
| Page Count: | 19 |
scope:
This specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR). Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance for each unencapsulated device type die (element evaluation) as specified in MIL-PRF-19500.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
November 27, 2023
TRANSISTOR, QUAD, FIELD EFFECT, P-CHANNEL, SILICON, 14-PIN DUAL INLINE PACKAGE, TYPE 2N7335, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings (EAS and EAR) and maximum avalanche current...
October 19, 2018
TRANSISTOR, QUAD, FIELD EFFECT, P-CHANNEL, SILICON, 14-PIN DUAL INLINE PACKAGE, TYPE 2N7335, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR)....
February 27, 2015
SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, P-CHANNEL, SILICON, TYPE 2N7335, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR)....
May 9, 2014
SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, P-CHANNEL, SILICON, TYPE 2N7335, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR)....
November 20, 2008
Semiconductor Device, Quad, Field Effect Transistors, P-Channel, Silicon Type 2N7335 JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
This specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type...
MIL-PRF-19500/599
October 31, 2003
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR)....
October 31, 2003
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type...
June 26, 2001
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
May 8, 1998
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
December 30, 1997
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type...
June 30, 1997
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
July 12, 1995
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
March 31, 1995
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for quad P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product...
December 16, 1994
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
July 28, 1994
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for quad P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...
January 27, 1993
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JANTX, JANTXV, JANS, AND JANC
A description is not available for this item.
January 8, 1993
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JANTX, JANTXV, JANS, AND JANC
A description is not available for this item.
July 29, 1992
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JANTX, JANTXV, JANS, AND JANC
A description is not available for this item.
November 4, 1991
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JANTX, JANTXV, JANS, AND JANC
This specification covers the detail requirements for quad P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...