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DIN EN 62047-9

Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS (IEC 62047-9:2011); German version EN 62047-9:2011

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Organization: DIN
Publication Date: 1 March 2012
Status: active
Page Count: 26
ICS Code (Electromechanical components in general): 31.220.01
ICS Code (Semiconductor devices in general): 31.080.01
scope:

Diese Norm legt ein Prüfverfahren zur Bondfestigkeit von Full-Wafer-Bondverbindungen, Bondprozesstypen wie Silizium-Fusions-Bonden (Fusionsbonden), anodisches Silizium-Glas-Bonden (anodisches Bonden) usw. sowie anwendbare Strukturgrößen während des MEMS-Fertigungsprozesses bzw. der Assemblierung fest. Die anwendbare Waferdicke liegt im Bereich von 10 μm bis einige Millimeter.

Document History

DIN EN 62047-9
March 1, 2012
Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS (IEC 62047-9:2011); German version EN 62047-9:2011
Diese Norm legt ein Prüfverfahren zur Bondfestigkeit von Full-Wafer-Bondverbindungen, Bondprozesstypen wie Silizium-Fusions-Bonden (Fusionsbonden), anodisches Silizium-Glas-Bonden (anodisches Bonden)...

References

This document references:
IEC 60749-19 - Semiconductor devices – Mechanical and climatic test methods – Part 19: Die shear strength
Published by IEC on November 1, 2010
This part of IEC 60749 determines (see note) the integrity of materials and procedures used to attach semiconductor die to package headers or other substrates (for the purpose of this test method,...
This document references:
IEC 62047-2 - Semiconductor devices – Micro-electromechanical devices – Part 2: Tensile testing method of thin film materials
Published by IEC on August 1, 2006
This International Standard specifies the method for tensile testing of thin film materials with length and width under 1 mm and thickness under 10 μm, which are main structural materials for...
This document references:
ISO 6892-1 - Metallic materials — Tensile testing — Part 1: Method of test at room temperature
Published by ISO on November 1, 2019
This document specifies the method for tensile testing of metallic materials and defines the mechanical properties which can be determined at room temperature. NOTE Annex A contains further...
This document references:
EN 60749-19 - Semiconductor devices – Mechanical and climatic test methods Part 19: Die shear strength
Published by CENELEC on April 1, 2003
This part of IEC 60749 determines (see note) the integrity of materials and procedures used to attach semiconductor die to package headers or other substrates (for the purpose of this test method,...
This document references:
E399 - Standard Test Method for Linear-Elastic Plane-Strain Fracture Toughness of Metallic Materials
June 1, 2023
This test method covers the determination of fracture toughness (KIc and optionally KIsi) of metallic materials under predominantly linear-elastic, plane-strain conditions using fatigue precracked...
This document references:
IEC 60747-14-1 - Semiconductor devices – Part 14-1: Semiconductor sensors – Generic specification for sensors
Published by IEC on January 1, 2010
This part of IEC 60147-14 describes general items concerning the specifications for sensors, which are the basis for specifications given in other parts of this series for various types of sensors....
This document references:
EN ISO 6892-1 - Metallic materials - Tensile testing - Part 1: Method of test at room temperature
Published by CEN on December 1, 2019
This document specifies the method for tensile testing of metallic materials and defines the mechanical properties which can be determined at room temperature. NOTE Annex A contains further...
This document references:
IEC 62047-4 - Semiconductor devices – Micro-electromechanical devices – Part 4: Generic specification for MEMS
Published by IEC on August 1, 2008
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