IEC 62047-9
Semiconductor devices – Micro-electromechanical devices – Part 9: Wafer to wafer bonding strength measurement for MEMS
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| Organization: | IEC |
| Publication Date: | 1 July 2011 |
| Status: | active |
| Page Count: | 54 |
| ICS Code (Other semiconductor devices): | 31.080.99 |
scope:
This standard describes bonding strength measurement method of
wafer to wafer bonding, type of bonding process such as silicon to
silicon fusion bonding, silicon to glass anodic bonding, etc., and
applicable structure size during MEMS processing/assembly.
Document History
March 1, 2012
Semiconductor devices – Micro-electromechanical devices – Part 9: Wafer to wafer bonding strength measurement for MEMS
A description is not available for this item.
IEC 62047-9
July 1, 2011
Semiconductor devices – Micro-electromechanical devices – Part 9: Wafer to wafer bonding strength measurement for MEMS
This standard describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and...