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IEC 62047-9

Semiconductor devices – Micro-electromechanical devices – Part 9: Wafer to wafer bonding strength measurement for MEMS

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Organization: IEC
Publication Date: 1 July 2011
Status: active
Page Count: 54
ICS Code (Other semiconductor devices): 31.080.99
scope:

This standard describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 μm to several millimeters.

Document History

March 1, 2012
Semiconductor devices – Micro-electromechanical devices – Part 9: Wafer to wafer bonding strength measurement for MEMS
A description is not available for this item.
IEC 62047-9
July 1, 2011
Semiconductor devices – Micro-electromechanical devices – Part 9: Wafer to wafer bonding strength measurement for MEMS
This standard describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and...

References

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