DOD - SMD 5962-92057
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 18 PARALLEL FIFO, MONOLITHIC SILICON
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| Organization: | DOD |
| Publication Date: | 14 November 2012 |
| Status: | active |
| Page Count: | 28 |
scope:
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
January 23, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 18 PARALLEL FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Replaceability....
SMD 5962-92057
November 14, 2012
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 18 PARALLEL FIFO, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
June 15, 1993
MICROCIRCUIT, MEMORY, CMOS, 1K X 18 PARALLEL FIFO, MONOLITHIC SILICON
A description is not available for this item.