NPFC - MIL-PRF-19500/601
SEMICONDUCTOR DEVICE, FIELD EFFECT POWER TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7261 AND 2N7262 U AND U5 SUFFIXES, JANTXV, AND RADIATION HARDENED TYPE SUFFIXES, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
inactive
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| Organization: | NPFC |
| Publication Date: | 17 April 2013 |
| Status: | inactive |
| Page Count: | 27 |
scope:
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened and non-hardened, power transistors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
February 15, 2022
TRANSISTOR, N-CHANNEL, FIELD EFFECT, POWER RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES), TYPES 2N7261 AND 2N7262, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
Scope.
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)) and non-hardened, power...
May 23, 2016
TRANSISTOR, N-CHANNEL, FIELD EFFECT, POWER RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES), TYPES 2N7261 AND 2N7262, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened and non-hardened, power transistors. Two levels of product assurance (JANTXV and...
MIL-PRF-19500/601
April 17, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT POWER TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7261 AND 2N7262 U AND U5 SUFFIXES, JANTXV, AND RADIATION HARDENED TYPE SUFFIXES, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened and non-hardened, power transistors. Two levels of product assurance are provided...
March 14, 2012
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7261 AND 2N7262, U AND U5 SUFFIXES, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
June 10, 2011
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7261 AND 2N7262 AND U SUFFIXES, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...
July 5, 2006
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7261 AND 2N7262 AND U SUFFIXES, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...
November 16, 2004
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7261 AND 2N7262 AND U SUFFIXES, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...
August 19, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7261 AND 2N7262 AND U SUFFIXES, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...
July 17, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7261 AND 2N7262 AND U SUFFIXES JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...
October 12, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7261 AND 2N7262 AND U SUFFIXES JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...
June 6, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7261 AND 2N7262 JANTXVM, D, R, F, G, AND H AND JANSM, D, R, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power...
January 21, 1994
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7261 AND 2N7262 JANTXVM, D, R, F, G, AND H AND JANSM, D, R, F, G, AND H
This specification covers the detail requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power switching...
May 1, 1992
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7261 AND 2N7262 JANTXVM, D, R, H AND JANSM, D, R, H
A description is not available for this item.