scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 HS-1840RH Radiation hardened DI single 16-channel analog MUX/DEMUX with high impedance analog input overvoltage protection. 02 HS-1840ARH Radiation hardened DI single 16-channel analog MUX/DEMUX with high impedance analog input overvoltage protection

The device class designator is a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X CDIP2-T28 28 Dual-in-line Y CDFP3-F28 28 Flat pack

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage between V+ and V− .....................+40 V Supply voltage between V+ and GND ....................+20 V Supply voltage between V− and GND ....................−20 V V_REF to GND ..........................................+20 V Digital input overvoltage range ......................((GND)−4 V) ≤ V_A ≤ ((V_REF) + 4 V) Analog input overvoltage range (power on/off) ........−25 V ≤ V_S ≤ + 25 V Storage temperature range ............................−65°C to +150°C Maximum package power dissipation (P_D): 2/ Case X ..............................................1600 mW Case Y ..............................................1400 mW Lead temperature (soldering, 10 seconds) .............+275°C Thermal resistance, junction-to-case (Θ_JC) ...........See MIL-STD-1835 Thermal resistance, junction-to-ambient (Θ_JA): Case X ..............................................83.1°C/W Case Y ..............................................49.1°C/W

Positive supply voltage (V+) .........................+15 V Negative supply voltage (V−) .........................−15V V_REF .................................................5 V dc V_AH ..................................................4.0 V dc V_AL ..................................................0.8 V dc V_EN ..................................................0.8 V dc Ambient operating temperature range (T_A) .............−55°C to +125°C Radiation features: 3/ SEP effective let no upsets: Device type 01 ......................................110 MeV/cm²/mg Device type 02 ......................................4/ Total dose: Device type 01 ......................................> 200 kRads (Si) Device type 02 ......................................> 300 kRads (Si) Dose rate upset: Device type 01 ......................................> 1 × 10⁸ Rad(Si)/s Device type 02 ......................................Not tested Latch up .............................................None

intended Use: