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DLA - SMD-5962-92305

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 10000 GATE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 22 October 1993
Status: inactive
Page Count: 38
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and space application (device classes S and V) and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of radiation hardness assurance (RHA) levls are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes M, B, and S RHA marked devices shall meet the MIL-M-38510 specified RHA levls and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levls and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 4010-10 10000 gate programmable array 10 ns 02 4010-6 10000 gate programmable array 6 ns

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 B or S Certification and qualification to MIL-M-38510 Q or V Certification and qualification to MIL-I-38535

The case outlines shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X CMGA10-PN 191 1/ Pin grid array package Y See figure 1 196 Unformed-lead chip carrier Z CQCC1-F196 196 Unformed-lead chip carrier

The lead finish shall be as specified in MIL-M-38510 for classes M, B, and S or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range to ground potential (VCC) - - - - - −0.5 V dc to +7.0 V dc DC input voltage range - - - - - - - - - - - - - - - - - −0.5 V dc to VCC +0.5 V dc Voltage applied to three-state output(VTS) - - - - - - - −0.5 V dc to VCC +0.5 V dc Lead temperature (soldering, 10 seconds) - - - - - - - - +260°C Thermal resistance, junction-to-case (θJC): Case outlines X, Y, and Z - - - - - - - - - - - - - See MIL-STD-1835 Junction temperature (TJ) - - - - - - - - - - - - - - - +150°C 3/ Storage temperature range - - - - - - - - - - - - - - - −65°C to +150°C

Case operating temperature Range(TC) - - - - - - - - - −55°C to +125°C Supply voltage relative to ground(VCC) - - - - - - - - +4.5 V dc minimum to +5.5 V dc maximum Ground voltage (GND) - - - - - - - - - - - - - - - - - 0 V dc

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) - - - - - 5/ percent

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

May 9, 2014
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 10000 GATE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
March 15, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 10000 GATE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
A description is not available for this item.
October 4, 1996
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 10000 GATE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
A description is not available for this item.
September 26, 1995
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 10000 GATE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...
June 16, 1995
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 10000 GATE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
A description is not available for this item.
April 21, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 10000 GATE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-92305
October 22, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 10000 GATE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...

References

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