DLA - SMD-5962-03250 REV B
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 40,000 GATES WITH 18K OF INDEPENDENT SRAM, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 27 June 2006 |
| Status: | inactive |
| Page Count: | 22 |
scope:
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
February 2, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 40,000 GATES WITH 18K OF INDEPENDENT SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
SMD-5962-03250 REV B
June 27, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 40,000 GATES WITH 18K OF INDEPENDENT SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
July 4, 2004
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 40,000 GATES WITH 18K OF INDEPENDENT SRAM, MONOLITHIC SILICON
A description is not available for this item.
May 4, 2004
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 40,000 GATES WITH 18K OF INDEPENDENT SRAM, MONOLITHIC SILICON
A description is not available for this item.