DLA - SMD-5962-03250 REV A
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 40,000 GATES WITH 18K OF INDEPENDENT SRAM, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 4 July 2004 |
| Status: | inactive |
| Page Count: | 22 |
Document History
February 2, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 40,000 GATES WITH 18K OF INDEPENDENT SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
June 27, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 40,000 GATES WITH 18K OF INDEPENDENT SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-03250 REV A
July 4, 2004
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 40,000 GATES WITH 18K OF INDEPENDENT SRAM, MONOLITHIC SILICON
A description is not available for this item.
May 4, 2004
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 40,000 GATES WITH 18K OF INDEPENDENT SRAM, MONOLITHIC SILICON
A description is not available for this item.