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DLA - SMD-5962-96795 REV A

MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 20 December 1996
Status: inactive
Page Count: 26

Document History

November 6, 2023
MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
July 22, 2016
MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
January 21, 2009
MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
October 27, 2004
MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
February 18, 1998
MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
SMD-5962-96795 REV A
December 20, 1996
MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
May 17, 1996
MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...

References

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