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DLA - SMD-5962-96795

MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 17 May 1996
Status: inactive
Page Count: 24
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number 1/ Circuit function Data retention Access time 01 256K × 16 CMOS SRAM No 35 ns 02 256K × 16 CMOS SRAM No 25 ns 03 256K × 16 CMOS SRAM No 20 ns 04 256K × 16 CMOS SRAM Yes 35 ns 05 256K × 16 CMOS SRAM Yes 25 ns 06 256K × 16 CMOS SRAM Yes 20 ns

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level 8 microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X See figure 1 44 flat package Y See figure 1 44 CSOJ package

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Voltage on any input relative to VSS - - - - - - - - - −0.5 V dc to +7.0 V dc Storage temperature range - - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - - - 1.5 W Lead temperature (soldering, 10 seconds) - - - - - - - +260°C Thermal resistance, junction-to-case (ΘJC): Case X - - - - - - - - - - - - - - - - - - - - - - - EDI to provide Case Y - - - - - - - - - - - - - - - - - - - - - - - EDI to provide Junction temperature (TJ) - - - - - - - - - - - - - - - +150°C 3/ Output current - - - - - - - - - - - - - - - - - - - - 20 mA

Supply voltage range (VCC) - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc Supply voltage (VSS) - - - - - - - - - - - - - - - - 0 V Input high voltage range(VIH) - - - - - - - - - - - - 2.2 V dc to VCC + 0.5 V dc Input low voltage range (VIL) - - - - - - - - - - - - −0.3 V dc to +0.8 V dc 4/ Case operating temperature range (TC) - - - - - - - - −55°C to +125°C

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) . . . . . . 5/ percent

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

November 6, 2023
MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
July 22, 2016
MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
January 21, 2009
MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
October 27, 2004
MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
February 18, 1998
MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
December 20, 1996
MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-96795
May 17, 1996
MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...

References

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