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DLA - SMD-5962-90847 REV A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1 MEG X 4 DRAM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 24 November 1992
Status: inactive
Page Count: 53
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and space application (device classes S and V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class 14 microcircuits represent non-JAN class B microcircuits accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of radiation hardness assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes M, B, and S RHA marked devices shall meet the MIL-M-38510 specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V devices shall meet or exceed the electrical performance characteristics specified in table IA herein after exposure to the specified irradiation levels specified in the absolute maximum ratings herein and the RHA marked device shall be marked in accordance with MIL-I-38535. A dash (-) indicates a non RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number 1/ Circuit function Access time 01 1 M × 4, DYNAMIC RAM 120 ns 02 1 M × 4, DYNAMIC RAM 100 ns 03 1 M × 4, DYNAMIC RAM 80 ns

The device class designator shall be a single letter identifying the product assurance level (see 6.7 herein) as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 B or S Certification and qualification to MIL-M-38510 Q or V Certification and qualification to MIL-I-38535

For device classes M, B, and S, case outline(s) shall meet the requirements in appendix C of MIL-M-38510 and as listed below. For device classes Q and V, case outline(s) shall meet the requirements of MIL-I-38535, appendix C of MIL-M-38510, and as listed below.

The lead finish shall be as specified in MIL-M-38510 for classes M, B, and S or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Voltage range on any pin - - - - - - - - - - - - - - −1 V dc to 7 V dc Voltage range on VCC - - - - - - - - - - - - - - - - −1 V dc to 7 V dc Short circuit output current - - - - - - - - - - - - 50 mA Maximum power dissipation (PD) - - - - - - - - - - - 1 W Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Lead temperature (soldering, 10 seconds) - - - - - - +300°C Thermal resistance, junction-to-case (θJC) Case outline R - - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Case outlines X, Y, Z, U, T, M and N - - - - - - - 20°C/W 3/ Junction temperature (TJ) 4/ - - - - - - - - - - - +175°C

Supply voltage range (VCC) 5/ - - - - - - - - - - - +4.5 V dc to +5.5 V dc High-level input voltage (VIH) - - - - - - - - - - - 2.4 V dc minimum to 6.5 V dc maximum Low-level input voltage (VIL) 6/ - - - - - - - - - −1.0 V dc minimum to 0.8 V dc maximum Case operating temperature range (TC) - - - - - - - −55°C to +125°C

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) - - - - - - -7/ percent

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

June 13, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1MEG X 4 DRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
February 26, 2010
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1MEG X 4 DRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
December 17, 2004
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1 MEG X 4 DRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
July 20, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1 MEG X 4 DRAM, MONOLITHIC SILICON
DD Form 1695, APR 92 Previous editions are obsolete.
March 6, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1 MEG X 4 DRAM, MONOLITHIC SILICON
A description is not available for this item.
June 6, 1996
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1 MEG X 4 DRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
December 15, 1995
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1 MEG X 4 DRAM, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-90847 REV A
November 24, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1 MEG X 4 DRAM, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...
March 4, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1 MEG X 4 DRAM, MONOLITHIC SILICON
A description is not available for this item.

References

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