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DLA - SMD-5962-90847 REV C

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1 MEG X 4 DRAM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 6 June 1996
Status: inactive
Page Count: 43
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number 1/ Circuit function Access time 01 1 M × 4, DYNAMIC RAM 120 ns 02 1 M × 4, DYNAMIC RAM 100 ns 03 1 M × 4, DYNAMIC RAM 80 ns

The device class designator is a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style R GDIP1-T20 or CDIP2-T20 20 dual-in-line X See figure 1 20 flat pack Y See figure 1 26/20 leadless ceramic chip carrier Z See figure 1 26/20 J-leaded chip carrier U See figure 1 20 dual-in-line T See figure 1 26/20 leadless ceramic chip carrier M See figure 1 20 flat pack N See figure 1 20 zig-zag in-line

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Voltage range on any pin - - - - - - - - - - - - - - −1 V dc to 7 V dc Voltage range on VCC - - - - - - - - - - - - - - - - −1 V dc to 7 V dc Short circuit output current - - - - - - - - - - - - 50 mA Maximum power dissipation (PD) - - - - - - - - - - - 1 W Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Lead temperature (soldering, 10 seconds) - - - - - - +300°C Thermal resistance, junction-to-case (θJC) Case outline R - - - - - - - - - - - - - - - - - - See MIL-STD-1835 Case outlines X, Y, Z, U, T, M, and N - - - - - - 20°C/W 3/ Junction temperature (TJ) 4/ - - - - - - - - - - - - +175°C

Supply voltage range (VCC) 5/ - - - - - - - - - - - 4.5 V dc to +5.5 V dc High-level input voltage (VIN) - - - - - - - - - - - 2.4 V dc minimum to 6.5 V dc maximum Low-level input voltage (VIL) 6/ - - - - - - - - - - −1.0 V dc minimum to 0.8 V dc maximum Case operating temperature range (TC) - - - - - - - −55°C to +125°C

Fault coverage measurement of manufacturing Logic tests (MIL-STD-883, test method 5012)- - - - 7/ percent

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

June 13, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1MEG X 4 DRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
February 26, 2010
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1MEG X 4 DRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
December 17, 2004
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1 MEG X 4 DRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
July 20, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1 MEG X 4 DRAM, MONOLITHIC SILICON
DD Form 1695, APR 92 Previous editions are obsolete.
March 6, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1 MEG X 4 DRAM, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-90847 REV C
June 6, 1996
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1 MEG X 4 DRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
December 15, 1995
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1 MEG X 4 DRAM, MONOLITHIC SILICON
A description is not available for this item.
November 24, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1 MEG X 4 DRAM, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...
March 4, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1 MEG X 4 DRAM, MONOLITHIC SILICON
A description is not available for this item.

References

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