scope:

This specification establishes the general requirements for semiconductor devices. Detail requirements and characteristics are specified in the detail specification. Four levels of product assurance requirements are provided for in this specification, differentiated by the prefixes JAN, JANTX, JANTXV, and JANS (see table Ia). Four radiation hardness assurance (RHA) levels are provided for JANTXV and JANS product assurance levels (see table Ib). These are designated by the letters M, D, R, and H following the product assurance identifier portion of the prefix. A part per million (PPM) quality system is used for documenting and reporting the average outgoing quality of discrete semiconductor devices supplied to this specification, except for JAN level and devices which are inactive for new design. Statistical process control (SPC) techniques are required in the manufacturing process to minimize variation in production of discrete semiconductor devices supplied to the requirements of this specification.

The type designation for semiconductor devices furnished under this specification shall be formulated as follows:

The JAN, JANTX, JANTXV, JANTXVM, JANTXVD, JANTXVR, JANTXVH, JANS, JANSM, JANSD, JANSR, JANSH, or JANC prefix shall be used as applicable (see tables Ia and Ib).

The four levels of product assurance from the lowest level to the highest level shall be JAN, JANTX, JANTXV, and JANS. A higher assurance level product is substitutable for a lower assurance level product (see 6.2 for interchangeability). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ECT, 1507 Wilmington Pike, Dayton, OH 45444-5280, using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

A level of unencapsulated devices designated JANC is available. The requirements and quality conformance inspection are as specified in appendix H. Information on a specific device will be as specified in the associated detail specification for that device.

Semiconductor devices are identified by the prefix "XN". An "X" will usually be a number that is one less than the number of active element terminations.

It is recommended that each type of semiconductor device intended for standardization be assigned an identification, serially, by the Joint Electron Device Engineering Council, a council sponsored by the Electronic Industries Association and the National Electrical Manufacturers Association. The assignment will provide the component designation, the identification number, and a suffix letter as applicable.

The following suffix letters may be incorporated in the type number as applicable.

A, B, C, etc. - - - - - - - - Indicates a modified version which is substitutable (except L, M, P, R, S, U) for the basic numbered (nonsuffix) device. M - - - - - - - - - - - - - - Indicates matching of specified parameters of separate devices. R - - - - - - - - - - - - - - Indicates reverse polarity packaging of the basic numbered device. L or S - - - - - - - - - - - - Indicates that the terminal leads are longer or shorter, respectively, than those of the basic numbered device. U - - - - - - - - - - - - - - Indicates unloaded or surface mounted devices. P - - - - - - - - - - - - - - Indicates particle impact noise detection screened devices (for JANTX and JANTXV only). UR - - - - - - - - - - - - - - Indicates unloaded or surface mounted (round end cap diodes). US - - - - - - - - - - - - - - Indicates unloaded or surface mounted (square end cap diodes).

Suffix letter(s) except for P suffix, shall be used and marked on the device only when specific device types are covered by the applicable associated detail specification requiring the suffix letters.