scope:

This specification establishes the general performance requirements for semiconductor devices. Detail requirements and characteristics are specified in the performance specification sheet. Revisions to this and performance specification sheets are structured to assure the interchangeability of devices of the same part type regardless of manufacturing date code or conformance inspection (CI) completion date. Five quality levels for encapsulated devices are provided for in this specification, differentiated by the prefixes JAN, JANTX, JANTXV, JANJ, and JANS. Seven radiation hardness assurance (RHA) levels are provided for the JANTXV and JANS quality levels. These are designated by the letters M, D, L, R, F, G, and H following the quality level portion of the prefix. Two quality levels for unencapsulated devices are provided for in this specification, differentiated by the prefixes JANHC and JANKC.

This specification contains the performance requirement and verification methods for semiconductor devices. The main body specifies the performance requirements and requires the manufacturer to verify that their devices are capable of meeting those performance requirements. Appendix A contains definitions of terms used throughout the specification. Appendix B contains abbreviations and symbols. Appendix C contains the Quality Management (QM) Program. Appendix D contains the quality system. Appendix E contains the standard verification system for qualified products. Appendix F contains the Radiation Tolerant Source of Supply Program for semiconductor devices. Appendix G contains the standard verification flow for unencapsulated devices. Appendix H contains critical interface and materials for semiconductor devices.

The part numbering schemes are as follows:

a.The Part or Identifying Number (PIN) for encapsulated semiconductor devices furnished under this specification is formulated as follows:

b. The PIN for unencapsulated semiconductor devices furnished under this specification is formulated as follows: Beneficial comments (recommendation, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center Columbus, 3990 East Broad Street, Columbus OH 45316-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

The quality levels for encapsulated devices includes the JAN brand and associated modifiers as applicable (denoted by "QQQ" in 1.3). These quality levels from the lowest level to the highest level are JAN, JANTX, JANTXV, JANJ and JANS in accordance with appendix E. JANS is intended for space applications. The JANJ quality level is defined in the associated performance specification and in 3.3.1 herein. In performance specification sheets where the JAN level has been removed or omitted, it is acceptable via this document to manufacture and qualify the JAN assurance level once the Qualifying Activity has been notified and qualification has been extended to the JAN level. In these cases, the manufacturer will also notify the Preparing Activity to include the JAN level in the next revision of the applicable performance specification sheet.

The quality levels for unencapsulated devices includes the JAN brand and associated modifiers as applicable (denoted by "QC" in 1.3). JANKC is intended for space applications and JANHC is intended for standard military applications.

W is the place holder for the applicable letter which identifies the manufacture and the critical interface of a semiconductor die.

The RHA designator is a letter which identifies the applicable RHA level (denoted by "A" in 1.3). The RHA levels from lowest to highest are M, D, L, R, F, G, and H. (See appendix E, table II.)

Semiconductor devices are identified by the prefix "XN". The "X" will usually be a number that is one less than the number of active element terminations.

It is recommended that each type of semiconductor device intended for standardization be assigned an identification, serially, by the Joint Electron Device Engineering Council, a council sponsored by the Electronic Industries Alliance (EIA) 2500 Wilson Boulevard, Arlington, VA 22201-3834. The assignment will provide the component designation and the identification number.

The following suffix letters may be incorporated in the military type number as applicable.

A, B, C, etc. (except L, M, R, S, U, P) Indicates a modified version which is substitutable for the basic numbered (non- suffix) device M Indicates matching of specified parameters of separate devices R Indicates reverse polarity packaging of the basic numbered device L or S Indicates that the terminal leads are longer or shorter, respectively, than those of the basic numbered device P Indicates particle impact noise detection (PIND) screened devices (JANTX, and JANTXV only). U Indicates unleaded or surface mounted devices (different package configurations may also include a suffix letter). UR Indicates unleaded or surface mounted (round end cap diodes). US Indicates unleaded or surface mounted (square end cap diodes). −1 Indicates metallurgical bond. W Manufacture Identifier and critical interface identifier

Suffix letters(s), except for P, shall be used and marked on the device only when specific device types are covered by the applicable performance specification sheet requiring the suffix letters (see 3.10.6).

A device of a higher product assurance level may be substituted for the same basic PIN device of a lower product assurance level. Product assurance levels, in descending order of assurance are: JANS, JANTXV, JANTX, and JAN (for chips, JANKC may replace JANHC). RHA devices tested to a higher total dose requirement maybe substituted for the same basic PIN device with a lower total dose requirement (see appendix E, table II). For axial leaded diodes where the same PIN, both with, and without a dash one (-1) suffix exists, the dash one device is considered to be a higher assurance level and may be substituted for the non-dash one part. Non-dash one devices are inactive for new design (whenever dash-one devices exist). For those devices selected to voltage tolerance (e.g., zener diodes, transient voltage suppressors) the tighter tolerance device may be substituted for one of the more relaxed tolerance devices. For those devices selected to temperature coefficient (e.g., voltage reference diodes) the tighter tolerance device may be substituted for one of the more relaxed tolerance devices. Those devices (including unencapsulated devices) having higher voltage ratings may be substituted for lower voltage ratings, provided all other parameters are equal (e.g., 600 PIV for 100 PIV diode). Devices having suffix letters L or S or no lead length designator, may be substituted for each other in applications where the alternate lead length will fit. The part being used for substitution may retain its original marking, or the PIN may be remarked. Lot records shall maintain traceability of any remarking.