DLA - SMD-5962-88770 REV C
MICROCIRCUIT, LINEAR, SINGLE POWER MOSFET DRIVER, MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 4 March 1994 |
| Status: | inactive |
| Page Count: | 13 |
scope:
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".
The complete PIN shall be as shown in the following example:
The device type(s) shall identify the circuit function as follows:
Device type Generic number Circuit function Output 01 TSC429 Inverting power MOSFET driver 4.5 A dc 02 TSC4429 Inverting power MOSFET driver 4.5 A dc 03 TSC4420 Noninverting power MOSFET driver 4.5 A dc 04 MIC4451 Inverting hi speed, hi current MOSFET driver 12 A dc 05 MIC4452 Noninverting hi speed, hi current MOSFET driver 12 A dc
The case outline(s) shall be as designated in MIL-STD-1835 and as follows:
Outline letter Descriptive designator Terminals Package style H GDFP1-F10 or GDFP2-F10 10 Flat pack P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier
The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein). Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.
Supply voltage (VS)- - - - - - - - - - - - - - - - - 20 V dc Input voltage range (VIN): Device 01 - - - - - - - - - - - - - - - - - - - - VS + 0.3 V dc to GND − 0.3 V dc Devices 02, 03, 04, 05 - - - - - - - - - - - - - - VS + 0.3 V dc to GND − 5.0 V dc Output current (per pin, capacitance load): Devices 01 - 03 - - - - - - - - - - - - - - - - - 6.0 A dc Devices 04 - 05 - - - - - - - - - - - - - - - - - 12.0 A dc Peak supply current or GND current (per pin): Devices 01 - 03 - - - - - - - - - - - - - - - - - 6.0 A dc Devices 04 - 05 - - - - - - - - - - - - - - - - - 12.0 A dc Storage temperature range - - - - - - - - - - - - - −55°C to +125°C Power dissipation (PD): Case outline H - - - - - - - - - - - - - - - - - - 650 mW 1/ Case outline P - - - - - - - - - - - - - - - - - - 800 mW 2/ Case outline 2 - - - - - - - - - - - - - - - - - - 1.8 W 3/ Lead temperature (soldering, 10 seconds) - - - - - - +300°C Junction temperature range (TJ)- - - - - - - - - - - −55°C to +150°C
Supply voltage range - - - - - - - - - - - - - - - - 4.5 V dc ≤ VS ≤ 18 V dc Ambient operating temperature range (TA) - - - - - - −55°C to +125°C
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
