scope:

This specification covers the detail requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are provided for each device type as specified in MIL-S-19500. For JANC quality level see 6.4.

See figures 1 (DO-35), 2 (DO-213AA), and 3 (JANC).

Maximum ratings are as shown in 3, 4, and 10 of table IV herein and as follows:

a. P_T = 500 mW (DO-35) at T_L = 75°C, L = .375 (9.53 mm); both ends of case or diode body to heat sink at L = .375 (9.53 mm). (Derate I_Z to 0.0 mA dc at +200°C).

b. P_T = 500 mW (DO-213AA) at T_EC = 150°C. (Derate to 0 at 200°C).

c. −65°C ≤ T_op ≤ +200°C; −65°C ≤ T_STG ≤ +200°C.

Primary electrical characteristic columns 1, 6, 8 and 9 of table IV herein and as follows:

a. 3.3 V dc ≤ V_z ≤ 33 V dc.

b. R_ΘJL = 250°C/W (maximum) at L = .375 inch (9.53 mm) (D0-35).

c. R_ΘJEC = 100°C/W (maximum) junction to endcaps (D0-213AA). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: NASA/Parts Project Office (NPPO), NASA Goddard Space Flight Center, Code 310.A, Greenbelt, MD 20771, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.