scope:

This specification covers the detail requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance is provided for each encapsulated device type as specified in MIL-S-19500, and two levels of product assurance for each unencapsulated device type die. For JANHC and JANKC quality levels (see 6.4).

See figures 1 (DO-7 and DO-35), 2 (DO-213AA), and 3 (JANHC and JANKC).

Maximum ratings are shown in columns 3, 4, and 10 of table III herein and as follows:

a. P_T = 500 mW (DO-7 and DO-35) at T_L = +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink at L = .375 inch (9.53 mm). (Derate I_Z to 0.0 mA dc at +175°C).

b. P_T = 500 mW (DO-213AA) at T_EC = +125°C. (Derate to 0 at +175°C).

c. −65°C ≤ T_op ≤ +175°C; −65°C ≤ T_STG ≤ +175°C.

Primary electrical characteristic columns 1, 6, 8, and 9 of table III herein and as follows:

a. 3.3 V dc ≤ V_Z ≤ 33 V dc.

b. R_ΘJL = 250°C/W (maximum) at L = .375 inch (9.53 mm) (DO-7 and DO-35).

c. P_ΘJEC = 100°C/W (maximum) junction to endcaps (DO-213AA). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Electronic Supply Center, DESC-ELD, 1507 Wilmington Pike, Dayton, Ohio 45444-5270, by using the Standardization Document improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.