DLA - MIL-PRF-19500/437G
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES 1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1, 1N5518CUR-1, 1N5518DUR-1 THROUGH 1N5546BUR-1, 1N5546CUR-1, 1N5546DUR-1, JAN, JANTX, JANTXV, JANHC, AND JANKC
inactive
| Organization: | DLA |
| Publication Date: | 12 July 2006 |
| Status: | inactive |
| Page Count: | 23 |
scope:
This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die. For JANHC and JANKC quality levels (see 6.5).
intended Use:
The notes specified in MIL-PRF-19500 are applicable to this specification.
Document History
December 5, 2020
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES 1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, ENCAPSULATED (AXIAL LEADED AND SURFACE MOUNT PACKAGE) AND UNENCAPSULATED, 5, 2, AND 1 PERCENT VOLTAGE TOLERANCE, QUALITY LEVELS JAN, JANTX, JANTXV, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three...
July 28, 2019
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES 1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, ENCAPSULATED (AXIAL LEADED AND SURFACE MOUNT PACKAGE) AND UNENCAPSULATED, 5, 2, AND 1 PERCENT VOLTAGE TOLERANCE, QUALITY LEVELS JAN, JANTX, JANTXV, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three...
February 26, 2019
Semiconductor Device, Diode, Silicon, Low-Noise Voltage Regulator, Types 1N5518B-1, 1N5518C-1, 1N5518D-1 through 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1, 1N5518CUR-1, 1N5518DUR-1 through 1N5546BUR-1, 1N5546CUR 1, 1N5546DUR-1, JAN, JANTX, JANTXV, JANHC, and JANKC
A description is not available for this item.
April 9, 2014
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES 1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1, 1N5518CUR-1, 1N5518DUR-1 THROUGH 1N5546BUR-1, 1N5546CUR-1, 1N5546DUR-1, JAN, JANTX, JANTXV, JANHC, AND JANKC
This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of...
July 5, 2012
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES 1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1, 1N5518CUR-1, 1N5518DUR-1 THROUGH 1N5546BUR-1, 1N5546CUR-1, 1N5546DUR-1, JAN, JANTX, JANTXV, JANHC, AND JANKC
This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of...
March 25, 2008
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES 1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1, 1N5518CUR-1, 1N5518DUR-1 THROUGH 1N5546BUR-1, 1N5546CUR-1, 1N5546DUR-1, JAN, JANTX, JANTXV, JANHC, AND JANKC
This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of...
MIL-PRF-19500/437G
July 12, 2006
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES 1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1, 1N5518CUR-1, 1N5518DUR-1 THROUGH 1N5546BUR-1, 1N5546CUR-1, 1N5546DUR-1, JAN, JANTX, JANTXV, JANHC, AND JANKC
This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of...
July 20, 2005
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES 1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1, 1N5518CUR-1, 1N5518DUR-1 THROUGH 1N5546BUR-1, 1N5546CUR-1, 1N5546DUR-1, JAN, JANTX, JANTXV, JANHC, AND JANKC
This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of...
October 18, 2004
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES, 1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1, 1N5518CUR-1, 1N5518DUR-1 THROUGH 1N5546BUR-1, 1N5546CUR-1, 1N5546DUR-1 JAN, JANTX, JANTXV, JANHC, AND JANKC
This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of...
November 8, 2002
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES, IN5518B-1 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1, 1N5518CUR-1, 1N5518DUR-1 THROUGH 1N5546BUR-1, 1N5546CUR-1, 1N5546DUR-1 JAN, JANTX, JANTXV, JANHC AND JANKC
A description is not available for this item.
November 20, 1997
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES, 1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1, 1N5518CUR-1, 1N5518DUR-1 THROUGH 1N5546BUR-1, 1N5546CUR-1, 1N5546DUR-1 JAN, JANTX, JANTXV, JANHC, AND JANKC
A description is not available for this item.
September 15, 1997
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES, 1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1, 1N5518CUR-1, 1N5518DUR-1 THROUGH 1N5546BUR-1, 1N5546CUR-1, 1N5546DUR-1 JAN, JANTX, JANTXV, JANHC, AND JANKC
This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of...
February 12, 1996
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES, 1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1, 1N5518CUR-1, 1N5518DUR-1 THROUGH 1N5546BUR-1, 1N5546CUR-1, 1N5546DUR-1 JAN, JANTX, JANTXV, JANHC, AND JANKC
A description is not available for this item.
December 20, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES 1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1, 1N5518CUR-1, 1N5518DUR-1 THROUGH 1N5546BUR-1, 1N5546CUR-1, 1N5546DUR-1, JAN, JANTX, JANTXV, JANHC, AND JANKC
This specification covers the detail requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of...
July 22, 1993
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES, 1N5518B-1 THROUGH 1N5546B-1, 1N5518BUR-1 THROUGH 1N5546BUR-1, PLUS C- AND D- TOLERANCE SUFFIX, JAN, JANTX, JANTXV, AND JANC
This specification covers the detail requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Four levels of...
August 14, 1990
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES, 1N5518B THROUGH 1N5546B, 1N5546B-1, THROUGH 1N5546B-1 JAN, JANTX AND JANTXV
A description is not available for this item.
September 24, 1985
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES 1N5518B THRU 1N5546B, 1N5518B-1 THRU 1N5546B-1 JAN, JANTX AND JANTXV
A description is not available for this item.
September 28, 1984
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR 1N5518B THRU 1N5546B AND TX1N5518B THRU TX1N5546B
A description is not available for this item.
August 27, 1979
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR 1N5518B THRU 1N5546B AND TX1N5518B THRU TX1N5546B
A description is not available for this item.
July 8, 1975
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR 1N5518B THRU 1N5546B AND TX1N5518B THRU TX1N5546B
A description is not available for this item.
March 3, 1975
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR 1N5518B THRU 1N5546B AND TX1N5518B THRU TX1N5546B
A description is not available for this item.
August 15, 1973
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR 1N5518B THRU 1N5546B AND TX1N5518B THRU TX1N5546B
A description is not available for this item.
July 13, 1972
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR 1N5518B THRU 1N5546B AND TX1N5518B THRU TX1N5546B
A description is not available for this item.
May 2, 1972
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR 1N5518B THRU 1N5546B AND TX1N5518B THRU TX1N5546B
A description is not available for this item.
August 28, 1970
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR 1N5518B thru 1N5546B and TX1N5518B thru TX1N5546B
A description is not available for this item.