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DLA - SMD-5962-95599 REV A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY 4000 GATES, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 31 October 1997
Status: inactive
Page Count: 17
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is be as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Delay Factor (K) Min Max 01 7C386A-X 4000 Gate CMOS FPGA 0.39 3.00 02 QL16X24B-0 4000 Gate CMOS FPGA 0.39 1.82 03 QL16X24B-1 4000 Gate CMOS FPGA 0.39 1.56

The device class designator is a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X See figure 1 160 Quad flat package

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage range (VCC) ------------------------ −2.0 V dc to +7.0 V dc Programming supply voltage range (VPP) ------------ −2.0 V dc to +13.5 V dc 2/ DC input voltage range ----------------------------------- −2.0 V dc to +7.0 V dc 2/ Maximum power dissipation -------------------------------- 2.5 W 3/ Lead temperature (soldering, 10 seconds) ----------------- +300°C Thermal resistance, junction-to-case (θJC): Case outline X ------------------------------------------ 5.3°C/W Junction temperature (TJ) ------------------------- +175°C 4/ Storage temperature range -------------------------------- −65°C to +150°C Data retention ------------------------------------------- 10 years (minimum)

Case operating temperature Range(TC) ----------- −55°C to +125°C Supply voltage relative to ground(VCC) --------- +4.5 V dc minimum to +5.5 V dc maximum Ground voltage(GND) ----------------------------------- 0 V dc Input high voltage (VIH) ----------------------- 2.0 V dc minimum Input low voltage (VIL) ------------------------ 0.8 V dc maximum

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) ---------- 6/ percent

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

April 15, 2014
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY 4000 GATES, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
June 16, 1999
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY 4000 GATES, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
SMD-5962-95599 REV A
October 31, 1997
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY 4000 GATES, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
June 6, 1996
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY 4000 GATES, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...

References

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