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DLA - SMD-5962-90881 REV C

MICROCIRCUIT, LINEAR, HIGH SPEED, LOW POWER, PRECISION, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 8 October 1996
Status: inactive
Page Count: 18
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator., A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 TLE2021M High speed low power precision single operational amplifier 02 TLE2022M High speed low power precision dual operational amplifier 03 TLE2024M High speed low power precision quad operational amplifier 04 TLE2021AM High speed low power precision single operational amplifier 05 TLE2022AM High speed low power precision dual operational amplifier 06 TLE2024AM High speed low power precision quad operational amplifier 07 TLE202IBM High speed low power precision single operational amplifier 08 TLE2022BM High speed low power precision dual operational amplifier 09 TLE2024BM High speed low power precision quad operational amplifier

The device class designator is a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line G MACY1-X8 8 Can P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage (+VCC) .......................................... +20 V dc Supply voltage (−VCC) .......................................... −20 V dc Differential input voltage 3/ .................................. ±0.6 V dc Input voltage range (VI) (any input) ........................... ±VCC Input current (II) (each input) ................................ ±1 mA Output current (IO): Device types 01, 04, 07 ....................................... ±20 mA Device types 02, 05, 08 ....................................... ±30 mA Device types 03, 06, 09 ....................................... ±40 mA Total current into +VCC terminal: Device types 01, 04, 07 ....................................... 20 mA Device types 02, 03, 05, 06, 08, 09 ........................... 80 mA Total current into −VCC terminal: Device types 01, 04, 07 ....................................... 20 mA Device types 02, 03, 05, 06, 08, 09 ........................... 80 mA Duration of short circuit current at ( or below) +25°C 4/ ...... Unlimited Storage temperature range ...................................... −65°C to +150°C Terminal temperature for 60 seconds: Case 2 ........................................................ +260°C Lead temperature, soldering 6 mm (1/16 inch) from case for 60 seconds: Cases C, G, and P ............................................. +300°C Junction temperature ........................................... +150°C Power dissipation(PD) Cases 2 and C 5/ .............................................. 1375 mW Case G 5/ ..................................................... 650 mW Case P 5/ .................................................... 1050 mW Thermal resistance, junction-to-case (ΘJC) ..................... See MIL-STD-1835

Supply voltage (VCC) ........................................... ±2 V dc minimum, ±20 V dc maximum Common-mode input voltage (VIC) (+VCC = 5 V) ................... −0 V dc minimum, 3.2 V dc maximum Common-mode input voltage (VIC) (+VCC = ±15 V) ................. −15 V dc minimum, 13.2 V dc maximum Ambient operating free-air temperature (TA) .................... −55°C to +125°C Source resistance from ground to input terminals (RS) .......... 50 Ω)

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

September 17, 2018
MICROCIRCUIT, LINEAR, HIGH SPEED, LOW POWER, PRECISION, OPERATIONAL AMPLIFIER, DRAWING APPROVAL DATE MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
October 3, 2011
MICROCIRCUIT, LINEAR, HIGH SPEED, LOW POWER, PRECISION, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
January 16, 2003
MICROCIRCUIT, LINEAR, HIGH SPEED, LOW POWER, PRECISION, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-90881 REV C
October 8, 1996
MICROCIRCUIT, LINEAR, HIGH SPEED, LOW POWER, PRECISION, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
August 18, 1994
MICROCIRCUIT, LINEAR, HIGH SPEED, LOW POWER, PRECISION, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
A description is not available for this item.
November 25, 1992
MICROCIRCUIT, LINEAR, HIGH SPEED, LOW POWER, PRECISION, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes, consisting of military high reliability (device classes B, Q, and M)...
October 10, 1990
MICROCIRCUIT, LINEAR, HIGH SPEED, LOW POWER, PRECISION, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
A description is not available for this item.

References

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