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DLA - SMD-5962-95640 REV D

MICROCIRCUIT, LINEAR, DUAL/QUAD, RAIL-TO-RAIL, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 14 November 1997
Status: inactive
Page Count: 14
scope:

This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and non traditional performance environment (device class N). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

Device classes N, Q, and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 TLC2252 Rail-to-rail, very low power, dual, operational amplifier 02 TLC2254 Rail-to-rail, very low power, quad, operational amplifier 03 TLC2252A Rail-to-rail, very low power, dual, operational amplifier with enhanced VIO 04 TLC2254A Rail-to-rail, very low power, quad, operational amplifier with enhanced VIO

The device class designator is a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A N Certification and qualification to MIL-PRF-38535 with non-traditional performance environment (encapsulated in plastic) Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style Document C GDIP1-T14 or CDIP2-T14 14 Dual-in-line MIL-STD-1835 D GDFP1-F14 or CDFP2-F14 14 Flat pack MIL-STD-1835 H GDFP1-F10 or CDFP2-F10 10 Flat pack MIL-STD-1835 P GDIP1-T8 or CDIP2-T8 8 Dual-in-line MIL-STD-1835 X MS-012AA 8 Plastic small outline JEP-95 Y MS-012AB 14 Plastic small outline JEP-95 2 CQCC1-N20 20 Square leadless chip MIL-STD-1835 carrier

The lead finish is as specified in MIL-PRF-38535 for device classes N, Q, and V or MIL-PRF-38535, appendix A for device class M.

For device class N, plastic encapsulated microcircuits (PEMs) the following manufacturer PIN (see 3.5.1 herein) shall be marked:

Supply voltage range (VDD)....................................−8.0 V dc to +8.0 V dc 3/ Differential input voltage (VID)..............................−16.0 V dc to +16.0 V dc 4/ Input voltage range (VIN).....................................−VDD − 0.3 V to +VDD 3/ Input current, each input (IIN)...............................+5.0 mA to −5.0 mA Output current (IOUT).........................................+50.0 mA to −50.0 mA Total current into +VDD.......................................+50.0 mA to −50.0 mA Total current into −VDD.......................................+50.0 mA to −50.0 mA Duration of short circuit current at or below +25°C...........Unlimited 5/ Operating free-air temperature range (TA).....................−55°C to +125°C Storage temperature range (TSTG)..............................−65°C to +150°C Lead temperature (soldering 10 seconds).......................+260°C Maximum junction temperature (TJ).............................+150°C Maximum power dissipation (PD): 6/ Cases C and 2...............................................1375 mW Case D and H................................................700 mW Case P......................................................1050 mW Case X......................................................725 mW Case Y......................................................950 mW Thermal resistance, junction-to-case (ΘJC): Cases C, D, H, P, 2.........................................See MIL-STD-1835

1/ The SMD PIN is provided for cross reference information, see 3.5.2 herein.

Supply voltage (±VDD).........................................±2.2 V dc to ±8.0 V dc Input voltage range (VIN).....................................−VDD to +VDD − 1.5 V Common-mode input voltage (VIC)...............................−VDD to +VDD − 1.5 V Ambient operating temperature range (TA)......................−55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

July 12, 2022
MICROCIRCUIT, LINEAR, DUAL/QUAD, RAIL-TO-RAIL, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
Scope. This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device class Q), and nontraditional performance environment...
April 8, 2014
MICROCIRCUIT, LINEAR, DUAL/QUAD, RAIL-TORAIL, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device class Q), and nontraditional performance environment (device...
February 8, 2006
MICROCIRCUIT, LINEAR, DUAL/QUAD, RAIL-TO-RAIL, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment...
January 31, 2001
MICROCIRCUIT, LINEAR, DUAL/QUAD, RAIL-TO-RAIL, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment...
SMD-5962-95640 REV D
November 14, 1997
MICROCIRCUIT, LINEAR, DUAL/QUAD, RAIL-TO-RAIL, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and non traditional performance environment...
February 2, 1996
MICROCIRCUIT, LINEAR, DUAL/QUAD, RAIL-TO-RAIL, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
July 20, 1995
MICROCIRCUIT, LINEAR, DUAL/QUAD, RAIL-TO-RAIL, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Three product assurance classes consisting of space application (device class V), military high...
May 15, 1995
MICROCIRCUIT, LINEAR, DUAL/QUAD, RAIL-TO-RAIL, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...
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