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DLA - SMD-5962-96692 REV A

MICROCIRCUIT, MEMORY, DIGITAL, FLASH EPROM, 512K X 8-BIT, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 5 March 1997
Status: inactive
Page Count: 22
scope:

This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest reliability) and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes H and K RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 WMF512K8-150 FLASH EPROM, 512K × 8-bit 150 ns 02 WMF512K8-120 FLASH EPROM, 512K × 8-bit 120 ns 03 WMF512K8-90 FLASH EPROM, 512K × 8-bit 90 ns 04 WMF512K8-70 FLASH EPROM, 512K × 8-bit 70 ns

This device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device performance documentation D, E, G, H, or K Certification and Qualification to MIL-PRF-38534

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style T See figure 1 32 Ceramic flatpack, leadformed U See figure 1 32 Ceramic flatpack X See figure 1 32 Co-fired ceramic, single cavity, dual-in-line Y See figure 1 32 Co-fired ceramic, single cavity, SOJ

The lead finish shall be as specified in MIL-PRF-38534.

Supply voltage range (VCC)2/.......................... −2.0 V dc to +7.0 V dc Signal voltage range (any pin except A9)2/............ −2.0 V dc to +7.0 V dc Power dissipation (PD) ............................... 0.33 W maximum at 5 MHz Storage temperature range ............................ −65°C to +150°C Lead temperature (soldering, 10 seconds) ............. +300°C Data retention ....................................... 10 years minimum Endurance (write/erase cycles) ....................... 10,000 cycles minimum A9 voltage for sector protect (VID)3/................. −2.0 V dc to +14.0 V dc

Supply voltage range (VCC) ........................... +4.5 V dc to +5.5 V dc Input low voltage range (VIL) ........................ −0.5 V dc to +0.8 V dc Input high voltage range (VIH)........................ +2.0 V dc to VCC + 0.5 V dc Case operating temperature range (TC)................. −55°C to +125°C A9 voltage for sector protect (VID)................... +11.5 V dc to +12.5 V dc

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

August 24, 2011
MICROCIRCUIT, MEMORY, DIGITAL, FLASH EPROM, 512K x 8-BIT, MONOLITHIC SILICON
This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or...
February 18, 2005
MICROCIRCUIT, MEMORY, DIGITAL, FLASH EPROM, 512K X 8-BIT, MONOLITHIC SILICON
This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or...
October 21, 2004
MICROCIRCUIT, MEMORY, DIGITAL, FLASH EPROM, 512K X 8-BIT, MONOLITHIC SILICON
A description is not available for this item.
March 17, 2003
MICROCIRCUIT, MEMORY, DIGITAL, FLASH EPROM, 512K X 8-BIT, MONOLITHIC SILICON
A description is not available for this item.
March 29, 1999
MICROCIRCUIT, MEMORY, DIGITAL, FLASH EPROM, 512K X 8-BIT, MONOLITHIC SILICON
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
October 30, 1998
MICROCIRCUIT, MEMORY, DIGITAL, FLASH EPROM, 512K X 8-BIT, MONOLITHIC SILICON
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
February 17, 1998
MICROCIRCUIT, MEMORY, DIGITAL, FLASH EPROM, 512K X 8-BIT, MONOLITHIC SILICON
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
SMD-5962-96692 REV A
March 5, 1997
MICROCIRCUIT, MEMORY, DIGITAL, FLASH EPROM, 512K X 8-BIT, MONOLITHIC SILICON
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
April 22, 1996
MICROCIRCUIT, MEMORY, DIGITAL, FLASH EPROM, 512K X 8-BIT, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). This drawing describes device requirements for monolithic microcircuits to be processed in accordance...

References

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