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DLA - SMD-5962-96692

MICROCIRCUIT, MEMORY, DIGITAL, FLASH EPROM, 512K X 8-BIT, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 22 April 1996
Status: inactive
Page Count: 22
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). This drawing describes device requirements for monolithic microcircuits to be processed in accordance with class H requirements of MIL-PRF-38534. A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number(PIN).

The PIN shall be as shown in the following example:

Device classes H and K RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 WMF512K8-150 EPROM FLASH, 512K × 8-bit 150nS 02 WMF512K8-120 EPROM FLASH, 512K × 8-bit 120nS 03 WMF512K8-90 EPROM FLASH, 512K × 8-bit 90nS 04 WMF512K8-70 EPROM FLASH, 512K × 8-bit 70nS

This device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation H Certification and qualification to MIL-PRF-38534

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X See figure 1 32 Co-fired ceramic DIP Y See figure 1 32 Co-fired ceramic SOJ

The lead finish shall be as specified in MIL-PRF-38534 for classes H and K. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (VCC) . . . . . . . . . . . . . . . . . . . . −2.0 V dc to +7.0 V dc Signal voltage range (VG)(any pin except A9)2/ . . . . . . . . . . −2.0 V dc to +7.0 V dc Power dissipation (PD) . . . . . . . . . . . . . . . . . . . . . . 0.33 W maximum at 5 MHz Storage temperature range . . . . . . . . . . . . . . . . . . . . . −65° C to +150° C Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . +300° C Data retention . . . . . . . . . . . . . . . . . . . . . . . . . . 10 years minimum Endurance (write/erase cycles) . . . . . . . . . . . . . . . . . . 10,000 cycles minimum A9 voltage for sector protect (VID)3/ . . . . . . . . . . . . . . . −2.0 V dc to +14.0 V dc

Supply voltage range (VCC) . . . . . . . . . . . . . . . . . . . . +4.5 V dc to +5.5 V dc Input low voltage range (VIL) . . . . . . . . . . . . . . . . . . . −0.5 V dc to +0.8 V dc Input high voltage range (VIH) . . . . . . . . . . . . . . . . . . +2.0 V dc to VCC +0.5 V dc Case operating temperature (TC) . . . . . . . . . . . . . . . . . . −55° C to +125° C A9 voltage for sector protect . . . . . . . . . . . . . . . . . . . +11.5 V dc to +12.5 V dc

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes

Document History

August 24, 2011
MICROCIRCUIT, MEMORY, DIGITAL, FLASH EPROM, 512K x 8-BIT, MONOLITHIC SILICON
This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or...
February 18, 2005
MICROCIRCUIT, MEMORY, DIGITAL, FLASH EPROM, 512K X 8-BIT, MONOLITHIC SILICON
This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or...
October 21, 2004
MICROCIRCUIT, MEMORY, DIGITAL, FLASH EPROM, 512K X 8-BIT, MONOLITHIC SILICON
A description is not available for this item.
March 17, 2003
MICROCIRCUIT, MEMORY, DIGITAL, FLASH EPROM, 512K X 8-BIT, MONOLITHIC SILICON
A description is not available for this item.
March 29, 1999
MICROCIRCUIT, MEMORY, DIGITAL, FLASH EPROM, 512K X 8-BIT, MONOLITHIC SILICON
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
October 30, 1998
MICROCIRCUIT, MEMORY, DIGITAL, FLASH EPROM, 512K X 8-BIT, MONOLITHIC SILICON
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
February 17, 1998
MICROCIRCUIT, MEMORY, DIGITAL, FLASH EPROM, 512K X 8-BIT, MONOLITHIC SILICON
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
March 5, 1997
MICROCIRCUIT, MEMORY, DIGITAL, FLASH EPROM, 512K X 8-BIT, MONOLITHIC SILICON
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
SMD-5962-96692
April 22, 1996
MICROCIRCUIT, MEMORY, DIGITAL, FLASH EPROM, 512K X 8-BIT, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). This drawing describes device requirements for monolithic microcircuits to be processed in accordance...

References

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