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DLA - SMD-5962-90965 REV E

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 2,000 GATES, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 21 September 1998
Status: inactive
Page Count: 25
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Bin speed 01 1020A 2000 gate, field programmable gate array 186 ns 02 1020A-1 2000 gate, field programmable gate array 158 ns 03 1020B 2000 gate, field programmable gate array 168.2 ns 04 1020B-1 2000 gate, field programmable gate array 142.9 ns 05 RH1020 2000 gate, field programmable gate array 168.2 ns

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X CQCC2 - J44 44 J-lead chip carrier Y CQCC2 - J68 68 J-lead chip carrier Z CQCC2 - J84 84 J-lead chip carrier U CMGA15 - P85 84 Pin grid array 1/ T CQCC1 - F84 84 Unformed lead chip carrier M See figure 1 84 Unformed lead chip carrier

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

DC supply voltage range (VDD) -------------------- −0.5 V dc to +7.0 V dc Input voltage range (VI) - ----------------------- −0.5 V dc to VDD + 0.5 V dc Output voltage range (VO) ------------------------ −0.5 V dc to VDD + 0.5 V dc I/O source sink current (IO) --------------------- ±20 mA Storage temperature range (TSTG) ----------------- −65°C to + 150°C Lead temperature (soldering, 10 seconds) --------- 300°C Thermal resistance, junction-to-case (θJC) Case outline X, Y, Z, U, T ----------------------- See MIL-STD-1835 Case outline M ----------------------------------- 10°C/W 3/ Maximum junction temperature (TJ) ---------------- +150°C

Supply voltage (VDD) ----------------------------- +4.5 V dc to +5.5 V dc Case operating temperature range (TC) ------------ −55°C to +125°C

Total Dose ---------------------------------------- 300K rads (maximum) 4/

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012)--------100 percent 5/

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

November 26, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 2,000 GATES, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
May 1, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 2,000 GATES, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
April 2, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 2,000 GATES, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
November 7, 2011
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 2,000 GATES, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
May 13, 2005
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 2,000 GATES, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
March 8, 2004
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 2,000 GATES, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-90965 REV E
September 21, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 2,000 GATES, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
July 10, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 2,000 GATES, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
April 6, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 2,000 GATES, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
June 30, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 2,000 GATES, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...
June 23, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 2,000 GATES, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...
June 23, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 2,000 GATES, MONOLITHIC SILICON
A description is not available for this item.

References

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