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DLA - SMD-5962-89736 REV B

MICROCIRCUITS, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT POSITIVE OR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 21 July 1997
Status: inactive
Page Count: 18
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

PIN. The PIN is as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device Type Generic number Circuit function 01 54ACT32 Quad two-input OR gate, TTL compatible inputs 02 54ACT11032 Quad two-input OR gate, TTL compatible inputs

The device class designator is a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat pack E GDIP1-T16 or CDIP2-T16 16 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage range (VCC).................................... −0.5 V dc to +6.0 V dc DC input voltage range (VIN).................................. −0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT)................................ −0.5 V dc to VCC + 0.5 V dc DC input diode current........................................ ±20 mA DC output diode current (per pin)............................. ±50 mA DC output source or sink current.............................. ±50 mA DC VCC or GND current......................................... ±50 mA 4/ Maximum power dissipation (PD)................................ 500 mW Storage temperature range (TSTG).............................. −65°C to + 150°C Lead temperature (soldering, 10 seconds)...................... +300°C Thermal resistance, junction-to-case (ΘJC).................... See MIL-STD-1835 Junction temperature (TJ)..................................... +175°C

Supply voltage range (VCC)................................... 4.5 V dc to +5.5 V dc Minimum high level input voltage (VIH)....................... 2.0 V dc Maximum low level input voltage (VIL)........................ 0.8 V dc Input voltage range (VIN).................................... +0.0 V dc to VCC Output voltage range (VOUT).................................. +0.0 V dc to VCC Maximum input rise or fall rate (Δt/ΔV):..................... 0 to 8 ns/V Case operating temperature range (TC)........................ −55°C to + 125°C

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012)................ XX percent 6/

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

November 21, 2018
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT POSITIVE OR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
January 26, 2017
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT POSITIVE OR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
April 25, 2013
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT POSITIVE OR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
September 13, 2007
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT POSITIVE OR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
May 7, 2004
MICROCIRCUITS, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT POSITIVE OR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-89736 REV B
July 21, 1997
MICROCIRCUITS, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT POSITIVE OR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
October 28, 1991
MICROCIRCUITS, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT POSITIVE OR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
August 22, 1989
MICROCIRCUITS, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT POSITIVE OR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
A description is not available for this item.

References

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