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DLA - SMD-5962-88537 REV A

MICROCIRCUIT, LINEAR, LOW-NOISE, PRECISION, HIGH SPEED OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 30 May 1997
Status: inactive
Page Count: 13
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following examples.

For device classes M and Q:

For device class V:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 OP-37A Low-noise, precision, high-speed operational amplifier 02 OP-37B Low-noise, precision, high-speed operational amplifier 03 OP-37C Low-noise, precision, high-speed operational amplifier

The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and a designators will not be included in the PIN and will not be marked on the device.

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style G MACY1-X8 8 Can H GDFP1-F10 or CDFP2-F10 10 Flat pack P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage (VS) --------------------------------------------- ±22 V Internal power dissipation 2/------------------------------------ 500 mW Input voltage 3/------------------------------------------------- ±22 V Output short-circuit duration ----------------------------------- Indefinite Differential input voltage 4/------------------------------------ ±0.7 V Differential input current 4/------------------------------------ ±25 mA Storage temperature range---------------------------------------- −65°C to +150°C Operating temperature range-------------------------------------- −55°C to +125°C Lead temperature (soldering, 60 seconds)------------------------- +300°C Junction temperature range (TJ) --------------------------------- −65°C to +150°C Thermal resistance, junction-to-case (θJC)----------------------- See MIL-STD-1835 Thermal resistance, junction-to-ambient (θJA): Cases G and H------------------------------------------------- 150°C/W Case P-------------------------------------------------------- 119°C/W Case 2 ------------------------------------------------------- 110°C/W

Supply voltage (VS) --------------------------------------------- ±15V Source resistor (RS) -------------------------------------------- 50Ω Ambient operating Temperature range (TA)------------------------- −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

April 15, 2019
MICROCIRCUIT, LINEAR, INSTRUMENTATION AMPLIFIER, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead...
February 9, 2011
MICROCIRCUIT, LINEAR, LOW-NOISE, PRECISION, HIGH SPEED OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
May 20, 2003
MICROCIRCUIT, LINEAR, LOW-NOISE, PRECISION, HIGH SPEED OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
A description is not available for this item.
December 20, 2001
MICROCIRCUIT, LINEAR, LOW-NOISE, PRECISION, HIGH SPEED OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-88537 REV A
May 30, 1997
MICROCIRCUIT, LINEAR, LOW-NOISE, PRECISION, HIGH SPEED OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and space application (device class V). A choice of case outlines and lead finishes are...
October 17, 1988
MICROCIRCUIT, LINEAR, LOW-NOISE, PRECISION, HIGH SPEED OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing, describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....

References

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