scope:

This drawing documents has two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following examples.

For device classes M and Q:

For device class V:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 UT1553B BCRTM Bus controller, remote terminal and monitor

The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device.

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X CMGA15-P84 84 Pin grid array Y CQCC2-J84 84 Leaded chip carrier w/unformed leads Z CQCC1-N84 84 Square chip carrier

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage range ................................ 0.3 V to +7.0 V DC input/dc output voltage range (V_I/O............... −0.3 V to (V_DD +0.3 V) DC input current (I_I) ............................... ±10 mA Storage temperature range ........................... −65°C to +150°C Lead temperature (soldering 10 seconds .............. +300°C Maximum power dissipation, (P_D) 2/ .................. 300 mW Maximum junction temperature (T_J) ................... +175°C Thermal resistance, junction-to-case (θ_JC) .......... See MIL-STD-1835 Latchup immunity (I_LU) .............................. ±150 mA Duty cycle........................................... 50 ± 10 percent

Supply voltage (V_DD) ................................ 4.5 V to 5.5 V Case operating temperature range (T_C) ............... −55°C to +125°C Operating frequency (F_O) ............................ 12 MHz ± .01 percent Radiation features: Total dose ......................................... ≥ 1 × 10⁶ Rads (Si) Single event phenomenon (SEP) effective linear energy threshold, no upsets or latchup (see 4.4.4.4).................. ≥ 55 MEV/(mg/cm²) Dose rate upset (20 ns pulse) ...................... 3/ Dose rate latchup................................... 3/ Dose rate survivability ............................ 3/ Neutron irradiated ................................. > 1 × 10¹⁴

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012 ......... 86.5 percent

intended Use: