scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device types shall identify the circuit function as follows:

Device type 1/ Generic number 2/ Circuit function Access time 01 2568C 32K × 8-bit radiation hardened PROM (CMOS inputs) 45 ns 02 2568T 32K × 8-bit radiation hardened PROM (TTL inputs) 45 ns

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X CDFP3-F28 28 Flat pack

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage range ........................................ −0.5 V dc to +7.0 V dc Voltage on any pin with respect to ground ................... −0.5 V dc to V_DD +0.5 V dc Maximum power dissipation (P_D) .............................. 1.5 W Lead temperature (soldering, 10 seconds maximum) ............ +260°C Thermal resistance, junction-to-case (Θ_JC) .................. See MIL-STD-1835 Junction temperature (T_J) ................................... +175°C Storage temperature range ................................... −65°C to +150°C Temperature under bias ...................................... −55°C to +125°C

Supply voltage (V_DD) ........................................ +4.5 V dc to +5.5 V dc Ground voltage (GND) ........................................ 0.0 V dc Input high voltage (V_iH), Device 01 ......................... +3.5 V dc minimum to V_DD Device 02 ......................... +2.2 V dc minimum to V_DD Input Low voltage (V_IL), Device 01 .......................... 0.0 V dc to +1.5 V dc maximum Device 02 .......................... 0.0 V dc to +0.8 V dc maximum Case operating temperature range (T_C) ....................... −55°C to +125°C Radiation features: Total dose irradiation .................................... ≥ 200 KRads(Si) Single event phenomenon (SEP) effective linear energy threshold (LET) with no upsets ............. ≥ 120 MEV-cm²/mg Neutron irradiation ....................................... 1 × 10¹⁴ neutrons/cm² 4/

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) ................ 100 percent

intended Use: